Growth of p- and n-type ZnSe by molecular beam epitaxy

Abstract

We have attempted to control the majority carrier type and the conductivity of ZnSe films by incorporating Cl, Li, and Na as dopants. Our studies indicate that Cl is a well-behaved donor species in ZnSe and carrier concentrations greater than 10 19 cm -3 can be achieved. Preliminary results indicate that Na forms a shallow acceptor when present in small amounts, but no p-type conduction has been observed. ZnSe layers doped with Li thus far have given the most promising results for p-type conversion. Low temperature photoluminescence spectra of the Li-doped films are dominated by emission from acceptor-bound excitons and electrical measurements confirm the majority carriers in these films to be holes.