Abstract
Optical properties of ZnO thin films fabricated on GaAs substrate by molecular beam epitaxy method were investigated. The emissions from acceptor-bound exciton and free electron acceptor were enhanced after annealing at 550 °C for 1 h. In the photoluminescence spectra of the annealed sample, donor–acceptor pair emission was confirmed by changing excitation density. Hall measurement indicated that the conductivity of the ZnO thin film converses from n-type to high resistant after thermal diffusion by annealing at 550 °C.
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