Abstract
The electrical properties of n-CdTe films grown by molecular beam epitaxy on (001) InSb substrates have been studied with a view to examining the influence of dislocations arising from strain relaxation in these materials. It is shown that the observed nonuniformity in free carrier density as a function of depth through the films can be explained by electron trapping at dislocations assuming that the density of dislocations diminishes with distance from the substrate surface in proportion to the spatially distributed strain within the films. From a comparison of the experimentally deduced and theoretically derived values for the maximum dislocation density, it is concluded that CdTe layers grown using a stoichiometric Cd/Te flux are characterized by an interfacial layer, probably In2Te3, consistent with independent evidence from x-ray diffraction studies.
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