Abstract
We have investigated magneto-transport and cyclotron resonance (CR) of a two-dimensional electron gas (2DEG) and associated bound donors in silicon delta-doped p-InSb, under a magnetic field up to 12 T at 4.2 K. Due to the high mobility of the 2DEG (∼ 20 000 cm 2/V · s), the CR peaks originating from several subbands in the delta-doped region are observed for the first time. We have also observed an additional absorption peak, whose resonant position has an angular dependence opposite to that of the 2DEG. According to its resonant position and its dependence on the Si concentration, we attribute this additional peak to impurity CR where donors are in the vicinity of the delta-doped sheet.
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