Abstract
We have carried out cyclotron resonance (CR) measurements of (InGaAs) 8/(AlAs) 8 superlattice (SL) to investigate electronic properties of the SL under pulsed ultra-high magnetic fields. The magnetic fields up to 160 T were generated by using the single-turn-coil technique. Clear CR signals were obtained in the transmission of far-infrared laser through the SL at room temperature and lower temperature. We observed a shift of CR peak to lower magnetic field caused by transition from free-electron CR to impurity CR below ∼90 K. Compared with the previous works of GaAs/AlAs SL, the peak shift was small and the transition temperature was low. This result suggests that a binding energy of the impurity in the InGaAs/AlAs SL is smaller than the GaAs/AlAs SL.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
