Abstract
Experiments to determine the resistivity and charge-carrier mobility in semiconductingcarbon nanotubes are reviewed. Electron transport experiments on longchemical-vapour-deposition-grown semiconducting carbon nanotubes are interpreted interms of diffusive transport in a field-effect transistor. This allows for extraction of thefield-effect and saturation mobilities for hole carriers, as well as an estimate ofthe intrinsic hole mobility of the nanotubes. The intrinsic mobility can exceed100 000 cm2 V−1 s−1 at room temperature, which is greater than any other known semiconductor. Scanned-probeexperiments show a low degree of disorder in chemical-vapour-deposition-grownsemiconducting carbon nanotubes compared with laser-ablation produced nanotubes, andshow conductivity and mean-free-path consistent with the high mobility values seen intransport experiments. The application of high-mobility semiconducting nanotubes tocharge detection and memory is also reviewed; it is shown that single electronic chargesmay be detected with a semiconducting nanotube field-effect transistor at operatingtemperatures up to 200 K.
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