Abstract
Two-dimensional (2D) semiconductors have shown great potential in electronic applications. One of their key properties is the intrinsic mobility of the charge carriers (electrons/holes) at room temperature, the understanding of which is still limited partially due to the challenges in experimentally probing the intrinsic properties without the external interference. First-principles methods, enabled by recent developments, are ideal for calculating and understanding the intrinsic mobility. In this paper, we review the first-principles methods for calculating the intrinsic carrier mobility of 2D semiconductors, and the progress in understanding the underlying physical factors governing the mobility. Finally, we provide some perspectives on further research directions.
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