Abstract
Abstract ITO film strain gauge was deposited onto the stainless steel substrate by direct current magnetron sputtering technology. For ITO film without preferred orientation, the gauge factor of ITO film strain gauge was only about −4.55, because of the mixture of piezoresistive effect along random crystallographic direction, as well as the scattering of applied tensile. For ITO film with (1 0 0) preferred orientation, the gauge factor of ITO film strain gauge was controlled by the piezoresistive effect along uniform (1 0 0) crystallographic direction. Then, the gauge factor of strain gauge with (1 0 0) preferred orientation could increase the gauge factor to −5.24.
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