Abstract

The preparation process of ITO film has been fully matured, but the precise control of preferred orientation has always been a difficult problem. ITO films with different preferred orientations were prepared on glass substrates by DC sputtering with a ceramic target, and the precise control of ITO films with (211), (222), (400), and (440) high preferred orientations was achieved. The effect of technological conditions on the preferred orientation of ITO film was systematically studied, and the growth mechanism of the preferred orientation of ITO film was analyzed by surface energy calculation. (400) preferred film has excellent electric properties (ρ = 2.633 × 10−4 Ω cm) and an average transmittance of visible light (87.1%). Compared with the other three preferred oriented films, (400) preferred film has the highest quality factor and surface energy, which is attributed to the abundance of the surface dangling-bonds of Indium atoms on the end surface of (400) preferred film, which provides higher carrier transfer capacity for ITO film. (400) Preferentially oriented films are of great significance for the application of transparent electrodes.

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