Abstract
2.0 MeV Au+ ions were implanted into different Si substrates with a fluence of 2×1015 ions/cm2 at room temperature with different angles of incidence. Tested Si substrates are amorphized Si, amorphous Si film and crystal Si. The mean projected range, range straggling and lateral spread have been studied by Rutherford backscattering (RBS). The results show that (1) the experimental mean projected range is larger than the value predicted by TRIM (transport of ions in matter) by around 20%; (2) the experimental range straggling and lateral spread deviate significantly from the TRIM predictions; (3) after the correlation between nuclear and electronic stopping is included, the agreement between experimental and calculated values is markedly improved.
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