Abstract
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.
Highlights
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as braininspired computing and memcomputing
Phase-change memory devices are currently well-positioned to be used in the exploration of neuromorphic and memcomputing applications owing to the multi-level storage capability, proven large-scale manufacturability and good understanding we have of the underlying physical mechanisms and state dynamics[11]
In a projected memory device, the essential idea is to design the device in such a way that the physical mechanism of information storage is decoupled from the information-retrieval process[18]
Summary
Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as braininspired computing and memcomputing. The critical element in these fascinating new computing paradigms is a high-density, lowpower, variable-state, programmable and non-volatile nanoscale memory device[5,6,7,8,9,10] Key challenges, such as the high programming power required, noise and resistance drift, must be overcome. Key in this conventional approach is that the phase-change material is used both for writing information, by undergoing a phase transition, and for retrieving the information stored, by reading its low-field electrical resistance The drawback in this approach is that phase-change materials have excellent phase-transition properties, that is, they can undergo phase transitions on the nanosecond timescale[12,13] and down to nanoscale dimensions[12], their highly disordered nature and high defect density make them susceptible to highly undesirable electrical effects, such as noise and drift[14,15]. This is followed by experimental results, where we show almost complete elimination of drift and 1/f noise characteristics, thereby proving the efficacy of this concept
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