Progress in designing novel single-phase room temperature multiferroics

Abstract

Magnetoelectric multiferroics, because of their coupled electric and magnetic ordering in a single phase, are eminent for applications in logic and nonvolatile memory devices. Recent advances in computational modeling, synthesis, and characterization techniques are spurring significant advances in the study of these materials. During last several years, our group at University of Puerto Rico has been involved in synthesizing novel single-phase room temperature multiferroic materials that included not only solid solutions of lead zirconate titanate with lead iron tungstate, lead iron niobate, and lead iron tantalate, but also recently discovered palladium substituted room temperature multiferroics, namely PbPd0.3Ti0.7O3 and Pb(Zr0.2Ti0.8)Pd0.3O3. In this review, we have reported thin films of the above materials that were synthesized using pulsed laser deposition technique on various substrates at Speclab, University of Puerto Rico. We describe in detail thin film fabrication, structural diffraction analyses (XRD, TEM), dielectric, ferroelectric, piezo-response force microscopy, and magnetization results on recently grown Pd-substituted lead titanate and lead zirconate titanate thin films in an elaborate manner. The films were phase pure and stabilized in c-axis oriented tetragonal phase (P4mm) with surface roughness RQ of 2–4 nm. Temperature-dependent dielectric studies on metal-dielectric-metal heterostructure capacitors indicate that ferroelectric to paraelectric phase transition is above 500 K. A proof of ferroelectricity was confirmed from strong domain switching responses using piezo-response force microscopy. These films showed ferromagnetic ordering below 395 K. The origin of magnetic ordering in these materials was attributed to the existence of Pd2+ and Pd4+ mixed oxidation states of palladium dispersed in the polar matrices. We conclude with the above findings that these multiferroics may have potential applications.in nonvolatile memory and other multifunctional devices.