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Abstract
The top down planar process1 for the fabrication of Permalloy field access devices was extended from a 6.75×7.50-μm cell2 to a 4.75×5.0-μm cell with no major changes in the processing sequence. Direct step on wafer lithography, ion milling of the Permalloy, and plasma etching of AlCu were used in the device fabrication. Device topology was scaled, reducing the thicknesses of the Permalloy, oxide, and aluminum layers in order to decrease the permalloy-garnet spacing. The results of this work show that Permalloy field access bubble devices with 5.0-μm cells, 0.7-μm gaps, and 1.5-μm control lines can be processed over areas of 0.25–0.5 cm2, giving device capacities of 512 Kbits to 1 Mbit and device bit densities of 2×106/cm2.
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