Abstract
In this paper, contactless transient photo-conductance measurements are applied to p-doped mono-crystalline Silicon (p-Si) coated by two different kinds of aluminum oxide (Al2O3) layers in order to study alternative routes to the standard atomic layer deposition (ALD). The aluminum oxides layers were deposited by either spin coating or ion layer gas reaction (ILGAR?). For both coatings an increase of the charge carrier life time is observed indicating a passivation of the p-Si surface. This study shows alternative deposition methods and the potential of transient photocon- ductance measurements for the elucidation of the origin of the passivation. We show that the passivation induced by coating deposited via ILGAR is at least partially due to charge carrier trapping and storage at the interface. It was also surprisingly found that for those coatings, annealing at 425℃ leads to a decrease of the life time. This points to temperature instability for both coatings.
Highlights
For the study of the electrical passivation of semiconductor surfaces, a reliable analysis of these surfaces is required
In this work we present an analysis of charge carrier dynamics at the interface between p-doped monocrystalline silicon (p-Si) and two different kinds of aluminum oxide (Al2O3) layers, measured by contactless transient photo-conductance measurements
We have shown that contactless transient photo-conductance measurements allow a detailed analysis of the p-Si surface
Summary
For the study of the electrical passivation of semiconductor surfaces, a reliable analysis of these surfaces is required. In this work we present an analysis of charge carrier dynamics at the interface between p-doped monocrystalline silicon (p-Si) and two different kinds of aluminum oxide (Al2O3) layers, measured by contactless transient photo-conductance measurements. Aluminum oxide is an interesting alternative to silicon nitride (SiNx) and silicon oxide (SiO2) for electrical passivation of the silicon surface for photovoltaic cells [1]. Unlike SiNx, a fixed negative charge in Al2O3 coatings on silicon is reported [3]-[5]. In the present work the electrical passivation process induced by two different Al2O3 coatings will be studied. For ALD layers an improvement of the passivation was reported after annealing at 425 ̊C [8] [9]
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