Year-end Sale % OFF 
Abstract
150 keV O + ions with a dose of 1 × 10 17 O +/cm 2 were implanted in aluminum oxide (Al 2O 3) layers which were synthesized by 150 keV O + 2 ion implantation into an aluminum sheet with a dose of 4× 10 18 O +/cm 2 at room temperature. The changes of depth profile, structure and electrical properties before and after oxygen irradiation were investigated by means of Auger electron spectroscopy, X-ray diffraction and current-voltage characteristics. It was found that the effect of oxygen irradiation is similar to that of thermal annealing for the improvement of the surface properties of an ion-beam-synthesized Al 2O 3, layer. Furthermore, the mechanism for the improvement of the electrical properties and the effect of the oxygen ion energy on the formation of Al 2O 3 compounds produced by ion implantation were taken into account using calculations with LSS theory.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
