Abstract
AbstractIt has been observed that the sheet resistance of a Ti-salicided polysilicon-gate electrode or source/drain region increases significantly as the dimension reaches the lower sub-micron range. The resistance of platinum and nickel silicide (PtSi and NiSi), however, does not increase with reduced linewidth. We have studied PtSi and NiSi films with deep sub-micron linewidths on single crystal or poly-Si substrates. In this study, the material properties such as sheet resistance, grain structure and surface morphology of these silicide films in confined geometries are reviewed and compared with TiSi2. Process windows for forming and maintaining these silicides are explored.
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