Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching

Abstract

Inductively coupled plasma (ICP) etching is suitable for producing semiconductor structures with a high aspect ratio. While the morphology of the structures is very satisfactory, less is known about other aspects related to the process, but with potential influence in the optical performance of the devices. We present herein a study of the mechanical stresses produced by the ICP process in the fabrication of ridge waveguides in InP. Stresses purely induced by the process are revealed by the spectral analysis of the cathodoluminescence. A dependence of the stress distribution on the aspect ratio of the waveguides is demonstrated.