Abstract
The effects of rapid thermal post-oxidation N 2O anneal on conventional thermal oxides are studied in this work. The initial characteristics of oxide, including time-zero dielectric breakdown (TZDB), flat-band voltage ( V FB), and midgap interface trap density ( D itm), show dependence on the N 2O annealing time and temperature. The degradation of performances after 60Co γ-ray irradiation is limited by the presence of N 2O anneal and also depends on the N 2O annealing conditions. It is believed that the incorporation of nitrogen atoms into the SiO 2/ Si interface is responsible for the improved quality of the oxide.
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