Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors

Joseph Hillier,Zuo Li,Shinichi Saito,Muhammad Husain Khaled,Koji Ishibashi,Keiji Ono,Yoshishige Tsuchiya,Kouta Ibukuro,Harvey Nicholas Rutt,Isao Tomita,Fayong Liu

doi:10.1088/1361-6528/abef91

Abstract

Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel coupling t c of 57 μeV and a short spin−orbit length l SO of 250 nm. The demonstrated strong spin−orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.

Highlights

Silicon (Si) based devices have become the corner-84 stone of modern technology, and are a leading85 candidate for quantum information processing archi-86 tectures [1, 2, 3, 4]
The resulting charge stability diagram (CSD) are displayed in Figure 2., where181 differential conductance is plotted to aid182 in highlighting finer features outside Coulomb blockade (CB), including183 excited states, and most importantly, to better184 visualize Pauli spin-blockade (PSB)
CSDs drawn in Figure 2.(d)-(f) to better visualize the190 significant changes

Summary

Introduction

Silicon (Si) based devices have become the corner-84 stone of modern technology, and are a leading candidate for quantum information processing archi-86 tectures [1, 2, 3, 4]. Promising alternatives to tra-87 ditional metal-oxide-semiconductor field-effect transis-88 tors (MOSFETs) take the form of quantum dots (QDs) as qubits in single electron devices through the use of charge and spin as the fundamental building blocks. The use of multi-gate device architectures in particular has led to many breakthroughs by tun-93 ing the potential profiles defining QDs as well as the inter-dot tunneling barriers for precise control, where development is undertaken by academia and large pre-96 industrial fabrication facilities [8, 9, 10, 11, 12, 13, 14].97. Using Si for spin based quantum computing regimes is a natural choice for scalability and ease of integration with industrial fabrication techniques, but100 long coherence times owing to isotopically enriched101 zero nuclear spin 28 Si [15, 16]. The feasibility of spin102 qubits has been demonstrated by high fidelitys exceeding 99.8%, which can be utilized in combination with quantum error correction towards achieving fault tolerant quantum computing, promoting spin as a competitive candidate in this space with respect to trapped ion and superconducting platforms [17, 18, 19, 20, 21].

Methods

Results

Conclusion