Abstract

A hole spin is a potential solid-state q-bit, that may be more robust against nuclear spin induced dephasing than an electron spin. Here we propose and demonstrate the sequential preparation, control and detection of a single hole spin trapped on a self-assembled InGaAs/GaAs quantum dot. The dot is embedded in a photodiode structure under an applied electric field. Fast, triggered, initialization of a hole spin is achieved by creating a spin-polarized electron–hole pair with a picosecond laser pulse, and in an applied electric field, waiting for the electron to tunnel leaving a spin-polarized hole. Detection of the hole spin with picoseconds time resolution is achieved using a second picosecond laser pulse to probe the positive trion transition, where a trion is created conditional on the hole spin being detected as a change in photocurrent. Finally, using this setup we observe a Rabi rotation of the hole–trion transition that is conditional on the hole spin, which for a pulse area of 2 π can be used to impart a phase shift of π between the hole spin states, a non-general manipulation of the hole spin.

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