Abstract
We present Raman study of Fe3O4 films of different thicknesses grown on single crystal Si and MgO substrates to investigate the presence of antiphase boundaries (APBs). X-ray diffraction and x-ray photoelectron spectroscopy measurements indicate that films are single phase Fe3O4 on both the substrates. The changes in frequency and linewidth of different Raman modes [A1g and T2g(3)] are monitored and the electron-phonon coupling parameter (λ) is computed. λ is correlated with the combined effect of strain and APBs present in the grown films and it is concluded that the films grown on Si substrates are free from APBs.
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