Abstract
This paper deals with the characterization of an ionized physical vapor deposition (IPVD) by means of hollow cathode magnetron. Langmuir probe, optical emission spectroscopy measurements were used to study a mechanism for the production of excited argon and copper atoms and ions. The kinetic processes of excitation were considered and the main processes were determined using results of measurements. The pressure range is 0.5 - 10 mTorr with 1- 5 kW discharge power. Plasma parameters such as electron densities and temperatures, electron energy distribution function, plasma space and floating potentials as a function of the position, pressure and power in the growth chamber were measured. The plasma density is up to 1012 cm?3 at 20 cm from the magnetron for 10 mTorr.
Highlights
This paper deals with the characterization of an ionized physical vapor deposition (IPVD) by means of hollow cathode magnetron
Optical emission spectroscopy measurements were used to study a mechanism for the production of excited argon and copper atoms and ions
The hollow cathode magnetron (HCM) is new type of a source of plasma for films deposition using of atoms and ions of metal
Summary
The hollow cathode magnetron (HCM) is new type of a source of plasma for films deposition using of atoms and ions of metal. Feature of this discharge is high density plasma (more than 1012 cm−3 at pressure a few millitorrs) created in big (103 cm3) volume, low (10 - 50 eV) and changeable energy of the ions arriving at the substrate. Metal plasmas are often used in deposition of nanosized compound multilayers that can undergo phase changes at elevated temperatures [6,7] Film deposition in this discharge is accompanied by the streams of low-energy ions that allow to receive a film with unique properties
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