Abstract

This report presents a pressure-induced permanent metallization for MoS2 under non-hydrostatic conditions. Impedance and Raman spectra were measured to study the pressure-induced structural and electronic transformations of MoS2 at up to ∼25 GPa in diamond anvil cells under both non-hydrostatic and hydrostatic conditions. The results show evidence for isostructural hexagonal distortion from 2Hc to 2Ha and metallization at ∼17 GPa and ∼20 GPa under non-hydrostatic and hydrostatic conditions, respectively. Interestingly, the metallization is irreversible only under non-hydrostatic compression. We attribute this phenomenon to the incorporation of molecules of pressure medium between layers, which mitigate compressed stress and reduce interlayer interaction.

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