Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment

Abstract

This paper discusses the generation of thermal donor centers in silicon by oxygen ion implantation in the temperature range 350 to 550 °C. These donors are distributed almost uniformly over the entire thickness of the silicon crystals and well outside the region of direct penetration of the ions. It is established that implantation of Czochralski-grown silicon with oxygen ions followed by annealing accelerates the introduction of these donors into the silicon, and that application of hydrostatic pressure further accelerates the process of donor-center formation. The data indicate that this accelerated introduction of donors is associated with diffusion of radiation-induced defects from the implanted layer into the crystal bulk, and that the diffusion coefficients of these defects are 1×10−7 cm2/s or larger.