Abstract
Abstract Variation of bulk modulus of Si, Ge and GaAs with pressure is studied using four semiempirical equations of state, two of which being proposed very recently. Hence an expression for bulk modulus for arbitrary pressure for the semiconductors similar to Cohen's formula for zero pressure is arrived at. The applicability of these equations of state for the high pressure phases of Si and Ge is tested using the recent experimental and theoretical pressure-volume data of these phases.
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