Abstract
The electrical behavior of Si was studied for pressures up to 43 GPa and temperatures down to 2 K using a sintered-diamond-compact anvil cryogenic clamp press. Two types of samples, amorphous thin-film Si and semiconductor-quality crystalline Si, were used. The superconducting transition temperatures ${T}_{c}$ for high-pressure phases of the amorphous Si are about 3 K higher than those of the cystalline Si. The ${T}_{c}$ decreases monotonically for pressures higher than 25 GPa. No upturn in ${T}_{c}$ around 25 GPa as predicted theoretically for the simple-hexagonal phase was observed.
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