Abstract
The hydrostatic pressure dependence of pseudodirect gaps in ZnGeP 2 has been investigated at room temperature using a diamond anvil cell. The pressure coefficients of pseudodirect gaps between the lowest conduction band Γ 6 c and three valence bands (Γ 6 V, Γ 7 V, Γ 6 V) were −1.9 × 10 −6 eV/bar. These values are very close to that of the indirect gap (Γ 15 V−X 1 c) in A IIIB V semiconductors, as well as those in ZnSiP 2.
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