Abstract
The hydrostatic pressure dependence of pseudodirect gaps in ZnGeP2 has been investigated at room temperature using a diamond anvil cell. The pressure coefficients of pseudodirect gaps between the lowest conduction band Γ6c and three valence bands (Γ6V, Γ7V, Γ6V) were −1.9 × 10−6 eV/bar. These values are very close to that of the indirect gap (Γ15V−X1c) in AIIIBV semiconductors, as well as those in ZnSiP2.
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