Abstract
A violet InGaN multi-quantum-well (MQW)/GaN/AlGaN separate-confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The LDs with cleaved mirror facets showed an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The smallest aspect ratio of the far-field pattern was 1.6. The wavelength drift caused by the temperature change was estimated to be 0.06 nm/K. The lifetime of the LDs at a constant output power of 5 mW was more than 1900 h under CW operation at an ambient temperature of 50 °C. That at a constant output power of 30 mW was more than 400 h under CW operation at an ambient temperature of 60 °C.
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