Abstract
This paper reported on the prediction and analysis of the optical normalized reflectance (NR) transient of AlGaAs multi layers and Distributed Bragg Reflector (DBR) using transfer matrix method (TMM). The simulation result correlated well with the measured NR transient of grown samples. Deviations of AlxGa1⿿xAs composition between the expected and real grown sample were predicted successfully. Smaller optical oscillation amplitude in the first DBR layer was predicted and could be used as an indication of Al composition. Special characteristics of NR transient within the first three pairs of DBR were also clarified using the calculated transmissivity changing with the growth thickness. TMM simulation of NR transient was thus shown to be a convenient and reliable pre-production technique, also not restricted to the AlGaAs material.
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