Abstract
Efficiency of optoelectronic devices can be enhanced by using Distributed Bragg Reflector (DBR). Distributed Bragg Reflector (DBR) is a multipair layered structure of high and low refractive indices. High reflectivity of DBR is due to constructive interference of reflected light from interfacial layers of DBR. In the present paper, reflectivity of DBR composed of II-VI compound semiconductor is simulated using Transfer Matrix Method (TMM). In this paper, reflectivity of 4, 8, 12, 16 and 20 periods for the incidence angle of 45+ is simulated. Also, the effect of interchange of constituent layers in DBR stack, on reflectivity is simulated.
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