Abstract

With the continuous decrease in the critical dimensions of integrated circuit (IC) devices, transmission electron microscopy (TEM) has become an important tool for the study of these devices. Two reasons account for the new emphasis in TEM - small fabrication imperfections that did not affect the performance of devices in the past can no longer be ignored and thus need to be addressed, the dimensions of some features, such as gate oxide thicknesses, have become so small that only TEM can be used reliably to study them. However, as the need for TEM increases, the requirements for specimen preparation also has become more stringent. No longer is it acceptable to blindly prepare samples of blanket films or of any one of an array of devices, the ability to "hit" a specific area in a very short period of time has become a necessity. Fortunately, recent advances in the preparation of TEM specimens of IC devices has relieved some of the pressure of performing these jobs.

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