Preparation of Textured PZT Film on Substrates of YBaCu3O7-x/LaAIO3 by Sol-Gel Method

Abstract

YBaCu3O7-x film is considered as an ideal electrode material of PZT film due to: (i) its good conductivity at room temperature; (ii) the similar perovskite structures and good lattice matching between the prepared film and YBCO substrate. Up to now, much has been reported on such preparation methods of hetero-structure PZT/YBCO as physical method PLD and magnetron sputtering, etc. The film physical properties have been studied. However, little has been done on its ferroelectric property because of the very limited thickness of PZT film prepared by these methods. In this paper, Pb1.1Zr0.52Ti0.48O3 thin film with (001)-texture and thickness of 1 um is prepared on YBCO/LaAlO3 (LAO) substrate by sol-gel method. The microstructure and the ferroelectric properties of the film are studied. The results show that both PZT and YBCO thin films have not only the same (001) orientation but good lattice matching as well. In comparison with the randomly-orientated PZT film, the remnant polarization (Pr) of the (001)-textured PZT thin film is 28.7umC/cm2 increased by over 60%. Bipolar switching cycle experiment indicates that the remnant polarization of Pt/PZT/YBCO capacitor has no observable decay after 109 cycles. This result indicates that the anti-fatigue property of the film is improved.