Abstract
Polycrystalline SnO2 thin films have been prepared by the low-pressure plasma-assisted metalorganic chemical vapor deposition technique using tetrabutyltin (TBT) and oxygen as reactant gases. RF glow discharge during growth effectively enhances the thin film growth. Structural and electrical properties of the SnO2 films have been studied with relation to RF power, substrate temperature and the flow rate ratio of O2 to TBT. Highly (200)-oriented SnO2 films with Hall mobility of 20 cm2/V·s and electron concentration of 1019 cm-3 have been obtained at the substrate temperature of 400°C.
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