Preparation of rutile TiO2 thin films by laser chemical vapor deposition method

Dongyun Guo,Lianmeng Zhang,Chuanbin Wang,Qiang Shen,Takashi Goto,Akihiko Ito,Rong Tu

doi:10.1007/s40145-013-0056-y

Abstract

TiO2 thin films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD) method. The effects of laser power (PL) and total pressure (ptot) on the microstructure of TiO2 thin films were investigated. The deposition temperature (Tdep) was mainly affected by PL, increasing with PL increasing. The single-phase rutile TiO2 thin films with different morphologies were obtained. The morphologies of TiO2 thin films were classified into three typical types, including the powdery, Wulff-shaped and granular microstructures. ptot and Tdep were the two critical factors that could be effectively used for controlling the morphology of the films.

Highlights

The rutile TiO2 films are widely investigated because they have many applications such as capacitors, sensors, antireflection coatings, and corrosion-resistant barriers [1,2,3,4,5]
The rutile TiO2 thick films with random orientation were prepared by laser chemical vapor deposition (LCVD) with εr = 73, and the morphology and orientation of TiO2 thick films were controlled by the variation of PL [20,21]
TiO2 thin films were prepared on Pt/Ti/SiO2/Si substrate by LCVD with a continuous-wave Nd:YAG laser

Summary

Introduction

The rutile TiO2 films are widely investigated because they have many applications such as capacitors, sensors, antireflection coatings, and corrosion-resistant barriers [1,2,3,4,5]. The dielectric constant (εr) of the rutile TiO2 crystal is anisotropic and has values of 170 in the c direction and 89 perpendicular to the c direction, which indicates that TiO2 films have the possible application to future ultra-large-scale dynamic random access memory (DRAM) [6,7]. TiO2 films have been prepared by many methods, including sputtering, conventional chemical vapor deposition, sol–gel. TiO2 thin films are prepared on Pt/Ti/SiO2/Si substrate by LCVD, and the effects of ptot and PL on the orientation and microstructure of TiO2 thin films are investigated

Experiment

Results and discussion

Conclusions