Abstract

The TiO2 films were prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. With increasing laser power (PL) from 48 to 98W, the deposition temperature (Tdep) monotonously increased from 849 to 929K. At Tdep=849K (PL=48W), the rutile TiO2 film was prepared with strong (110) and (200) peaks. With increasing Tdep from 849 to 883K (PL=71W), the intensity of (110) peak increased. The (110)-oriented TiO2 films were obtained for Tdep beyond 903K (PL=81W). All TiO2 films showed faceted grains with the columnar cross-section. With increasing Tdep, the grain size increased and the column became wider. The high deposition rate (Rdep) ranged from 13.04 to 24.84μmh−1.

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