Preparation of TiO2 thick film by laser chemical vapor deposition method

Abstract

A TiO2 film was prepared on Pt/Ti/SiO2/Si substrate by a laser chemical vapor deposition method. The rutile TiO2 film with pyramidal grains and columnar cross-section was obtained at a high deposition rate (R dep = 11.4 μm h−1). At 300 K and 1 MHz, the dielectric constant (e r) and loss (tanδ) of the TiO2 film were about 73.0 and 0.0069, respectively. The electrical properties of TiO2 film were investigated by ac impedance spectroscopy over ranges of temperature (300–873 K) and frequency (102–107 Hz). The Cole–Cole plots between real and imaginary parts of the impedance (Z′ and Z′′) in the above frequency and temperature range suggested the presence of two relaxation regimes that were attributed to grain and grain boundary responses. The ionic conduction in the rutile TiO2 film was dominated by the oxygen vacancies.