Abstract
Abstract Ferroelectric PLT thin films were prepared by metallo-organic compound decomposition(MOD) process. Uniform, pin hole free and crack free PLT thin films with thicknesses ranging from 0.6pm to 1μm were prepared by repeating spinning-coating of precursor solutions and annealing for 8 times. The chemical compositions analyzed by electron probe were consistent with stoichiometry. The XRD analysis shows that pure perovskite phase and a-axial preferential orientation can be obtained in films with La content lower than 15mol% when fired over 500°C using silicon as substrate. Preferential orientation is also affected by the thickness of the film and its La content.
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