The crystallization and electrical properties of lead-based ferroelectric thin films for uncooled pyroelectric infrared detector

Abstract

Epitaxially grown and polycrystalline PT, PLT and PZT thin films with thickness from 1 to 2 μm have been prepared on Pt/Ti/SiO2/Si substrates by means of the modified sol–gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT and PLT thin films are 2.9×10−8 C/cm2 k and (3.37–5.25)×10−8 C/cm2 k, respectively. The figures of merit for voltage responsivity of PT and PLT thin films (F I ) are 0.60×10−10 Ccm/J and (0.79–1.13)×10−8 Ccm/J, respectively. The figures of merit for current responsivity of these films are 9.0×10−9 Ccm/J and (10.5–16.0)×10−9 Ccm/J, and the figures of merit for detectivity of these films are 0.74×10−8 Ccm/J and (0.79–1.13)×10−8 Ccm/J, respectively.