Investigation of crystallographic and pyroelectric properties of lead-based perovskite-type structure ferroelectric thin films

Abstract

Epitaxially grown and polycrystalline PbTiO 3 (PT), (Pb, La)TiO 3 (PLT) and Pb(Zr, Ti)O 3 (PZT) thin films with thicknesses from 1 to 2 μm have been prepared on Pt/Ti/SiO 2/Si substrates by means of a sol-gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT, PLT and PZT thin films are 2.9×10 −8 c/cm 2·k, (3.37–5.25)×10 −8 c/cm 2·k and 6.10×10 −8 c/cm 2·k, respectively. The figures of merit for voltage responsivity of PT, PLT and PZT thin films are 0.60×10 −10 C cm/J, (0.59–0.78)×10 −10 C cm/J and 0.63×10 −10 C cm/J, respectively. The current responsivity of these films are 9.0×10 −9 C cm/J, (10.5–16.0)×10 −9 C cm/J and 19.1×10 −9 C cm/J, and the detectivity are 0.74×10 −8 C cm/J, (0.79–1.13)×10 −8 C cm/J and 0.83×10 −8 C cm/J, respectively.