Abstract
The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π–π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15cm2/Vs for ZnTPEP and 0.029cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2cm2/Vs and H2TPEP showed 0.3cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP.
Published Version
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