High‐Performance Organic Single‐Crystal Transistors on Flexible Substrates

Abstract

The electronic properties of organic single crystals have been intensely studied for well over 40 years. Until recently, organic single-crystal field-effect transistors have generated results that are comparable to and sometimes better in performance than hydrogenated amorphous silicon. Organic thin-film transistors are being actively pursued for a broad area of electronic applications, but their charge-carrier mobilities are limited by structural imperfections (i.e., grain boundaries) and impurities. Organic single crystals, on the other hand, have been limited to charge-transport studies mainly because the fabrication of single-crystal transistors poses a technological challenge. Novel methods for fabricating single-crystal devices include the flip-crystal technique, elastomeric stamp platforms, and freestanding devices, where the source–drain electrodes, dielectric, and gate are all fabricated onto the crystal surface. For the most part, a relatively thick and rigid single crystal is employed (5–500 lm thick). Because the fragility makes them difficult to handle, their use has been restricted to simple and basic devices and wide-ranging applications in sensors or plastic transistors for flexible electronics have not yet been possible. Thus, there is a strong need for the development of mechanically flexible, nondestructive, single-crystal devices with prospective applications in organic electronics while maintaining the intrinsic properties and characteristics of organic single crystals. We demonstrate field-effect transistors fabricated from thin and conformable organic single crystals. We report on proofof-concept “flexible” organic single-crystal field-effect transistors with performance exceeding those of previously reported organic thin-film flexible devices. Rubrene single-crystal devices constructed on low-cost flexible substrates (Fig. 1b) yielded mobilities as high as 4.6 cm V s and on/off ratios of approximately 10.