Preparation of multilayered thin silicon-on-insulator structure by low-energy oxygen ion implantation

Abstract

Multilayered thin silicon-on-insulator (SOI) structures have been produced by multiple 25 keV oxygen implantation and in situ silicon growth by molecular beam epitaxy. The structures were analyzed by Auger electron spectroscopy and cross-sectional transmission electron microscopy. A double SOI structure after high temperature annealing has the top silicon layer, upper buried oxide layer, buried silicon layer, and lower oxide layer with thicknesses of 32, 40, 85, and 32 nm, respectively. The multilayered structure has abrupt interfaces between silicon and oxide layers and crystal quality comparable to that produced by the conventional separation by the implanted oxygen (SIMOX) process.