Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

Abstract

The effects of implantation temperature (Ti) on the chemical and physical structure of annealed high-dose oxygen ion implanted layers were investigated by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). At low Ti (∼400 °C) the buried oxide is bordered by layers of polycrystalline silicon (polysilicon) which, in the top silicon layer, is separated from damaged single crystal Si by a thin band of discontinuous oxide. These polysilicon layers are formed from amorphous regions during high-temperature anneals. At high Ti (∼500 °C) polysilicon was not observed.