Preparation of monoclinic Cu2SnS3 thin films by fine channel mist chemical vapor deposition method

Abstract

In this research, rare metal-free Cu2SnS3 (CTS) thin films were fabricated by the fine channel mist chemical vapor deposition (CVD) method, which does not require a vacuum apparatus. The mist solution was prepared by dissolving SnCl4 and CuCl2 in pure water (solvent). To obtain Cu-Sn (CT) precursor thin films by the fine channel mist CVD method, the mist solution was sprayed on alkali-free glass (Eagle) substrates heated at 390 °C. The prepared CT precursor films were then heated in a sulfur-containing atmosphere (H2S (3%) + N2) to obtain CTS thin films. The X-ray diffraction patterns of the samples showed the characteristic (200), (131), (−131), and (−333) peaks of monoclinic CTS. Raman scattering spectra of the samples showed peaks in the vicinity of 292, 313, 353, and 372 cm−1, attributed to monoclinic CTS. These results showed that the deposition of monoclinic CTS by the fine channel mist CVD method was prepared.