Abstract
AbstractEfforts of fabricating single crystalline ZnO thin films by the mist chemical vapor deposition (CVD) method have been reported in this paper. In our previous research, by using the water solution of zinc acetate as the Zn source, we have not succeeded in obtaining ZnO thin films of single crystalline structure under the reasonable growth rate. In our recent attempts reported here, the solvent of Zn source (zinc acetate) has been changed from water to methylacetate. This was greatly effective and successive to fabricate single crystalline and high quality ZnO thin films at increased growth rate. As far as X‐ray diffraction 2θ/ω, ω, in‐plane ϕ and 2θχ/ϕ scan spectra have been carefully investigated, it is reasonable to conclude that we could have obtained single crystalline ZnO thin films. The mist CVD technology features high partial pressure of oxygen in the reaction area and this may lead to fabricate high quality ZnO thin films with low density of oxygen vacancies. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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