Abstract
A high-mobility Cu2O thin film was fabricated using the mist chemical vapor deposition (CVD) method. This was achieved by suppressing the contamination from nitrogen impurities and optimum growth conditions to obtain single-phase Cu2O without CuO. A 600 nm Cu2O thin film was obtained using ethylenediaminetetraacetic acid as a complexing agent in dry-air growth atmosphere for 120 min. The resulting thin film had a resistivity of 2.8 × 102 Ω · cm, carrier concentration of 1.2 × 1015 cm−3 and hole mobility of 19.3 cm2 · V−1 · s−1. This hole mobility improved by two or more orders of magnitude compared to that of previous Cu2O thin film obtained by the mist CVD method.
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