Abstract
We have examined the preparation conditions of low-resistivity α-Ta thin films on (001) Si by conventional dc magnetron sputtering without bias sputtering or ion beam radiation. As a result, when the sputtering conditions at substrate temperatures above 400°C and sputtering dc powers above 50 W are satisfied, α-Ta films can be grown in a single-oriented (110) state on (001) Si by conventional dc sputtering to minimize the surface energy.
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