Abstract
Aluminum-doped ZnO (ZAO) thin films were deposited on fused quartz substrates by radio frequency sputtering in pure argon ambient at 450 °C. Effects of in situ annealing temperature and annealing atmosphere on microstructure, electrical and optical properties of ZAO films have been investigated. Results showed that as-grown film without annealing treatments attained lowest resistivity of 1.1 × 10−4Ω cm. And all films performed high average transmittance greater than 90% in visible region. X-Ray diffraction (XRD), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS) were utilized to characterize the microstructure properties of films. XRD results indicated that as-grown film had higher crystalline quality and larger grain size than annealed films. Al atoms replaced Zn efficiently to provide electrons stable in all samples. PL spectra revealed that high annealing temperature and oxygen atmosphere would generate more Zn vacancy (VZn) and oxide antisite defect (OZn), respectively and composition content results from XPS provided supports to this.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
