Abstract
Thin-film ZnO with a high degree of c-axis orientation has been grown on glass substrate by plasma-enhanced metalorganic chemical vapor deposition at a substrate temperature of 200°C and rf input powers higher than 220W. In this system the ZnO films were fabricated by reacting diethylzinc with CO2 gas. The crystallographic properties and surface morphology of the films were greatly affected by the rf input power level, the substrate temperature and the growth rate.
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